Infrared Ray Sensor Using Silicon Oxide Film as Infrared Ray Absorption Layer and Method of Fabricat
류상욱, 조성목, 유병곤, 김귀동
- 7105819 (2006.09.12)
- The present invention relates to a pyroelectric infrared ray sensor fabricated by using MEMS processes, wherein an infrared ray absorption layer disposed on the most top portion of the infrared ray sensor assembly is formed with a silicon oxide film (SiO2) to exhibit an excellent absorption efficiency with respect to the infrared wavelength band of 8 to 12 mm and function as a protective film for a sensor pixel. In addition, an infrared ray absorption layer, support arms and posts are formed in a single body to allow the sensor assembly to be robust and fabricating processes to be remarkably reduced to increase a process yield.
- KSP 제안 키워드
- 2 mm, Absorption layer, Infrared rays, Oxide film, Process yield, Protective film, Silicon oxide, Silicon oxide films, absorption efficiency, infrared ray sensor, infrared wavelength