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성과물

특허 검색
구분 출원국
출원년도 ~ 키워드

상세정보

등록 실리콘 발광 소자

실리콘 발광 소자
이미지 확대
발명자
김태엽, 박래만, 성건용
출원번호
10923230 (2004.08.20)
공개번호
20050139847 (2005.06.30)
등록번호
6998643 (2006.02.14)
출원국
미국
협약과제
초록
A silicon-based light emitting diode simultaneously adopts doping layers and Distributed Bragg Reflector (DBR). The silicon-based light emitting diode includes an active layer having mutually opposing a first side and a second side. A first reflecting portion faces with the first side of the active layer, and a second reflecting portion faces with the second side of the active layer. A first doping layer is interposed between the active layer and the first reflecting portion. A second doping layer is interposed between the active layer and the second reflecting portion. A first electrode is electrically connectable to the first doping layer, and a second electrode is electrically connectable to the second doping layer. Here, At least one of the first reflecting portion and the second reflecting portion has the DBR that is formed by alternately stacking two kinds of differently composed silicon-containing insulating layers and a gate.
KSP 제안 키워드
Active Layer, Bragg reflector, Distributed Bragg reflector, light-emitting, light-emitting diode(LED), silicon-based, silicon-containing