다중 게이트 모스 트랜지스터 및 그 제조 방법
이대우, 권성구, 유병곤, 박일용, 노태문, 김종대, 양일석
- 7335945 (2008.02.26)
- Provided are a multi-gate MOS transistor and a method of manufacturing the same. Two silicon fins are vertically stacked on a silicon on insulator (SOI) substrate, and four side surfaces of an upper silicon fin and three side surfaces of a lower silicon fin are used as a channel. Therefore, a channel width is increased, so that current driving capability of a device is improved, and high performance nano-level semiconductor IC and highly integrated memory IC can be manufactured through the optimization and stability of a process.
- KSP 제안 키워드
- Channel Width, High performance, MOS transistor, Silicon On Insulator(SOI), driving capability