실리콘과 실리콘 게르마늄 이종 구조를 가지는 고전압 전계효과 트랜지스터 및 그 제조 방법
조영균, 김종대, 권성구, 이대우, 노태문
- 7233018 (2007.06.19)
- Provided are high voltage metal oxide semiconductor field effect transistor (HVMOSFET) having a Si/SiGe heterojunction structure and method of manufacturing the same. In this method, a substrate on which a Si layer, a relaxed SiGe epitaxial layer, a SiGe epitaxial layer, and a Si epitaxial layer are stacked or a substrate on which a Si layer having a well region, a SiGe epitaxial layer, and a Si epitaxial layer are stacked is formed. For the device having the heterojunction structure, the number of conduction carriers through a potential well and the mobility of the carriers increase to reduce an on resistance, thus increasing saturation current. Also, an intensity of vertical electric field decreases so that a breakdown voltage can be maintained at a very high level. Further, a reduction in vertical electric field due to the heterojunction structure leads to a gain in transconductance (Gm), with the results that a hot electron effect is inhibited and the reliability of the device is enhanced.
- KSP 제안 키워드
- Breakdown voltage(BDV), Epitaxial layer, Field-effect transistors(FETs), High Voltage, Metal-oxide(MOX), Metal-oxide-semiconductor field-effect transistor(MOSFET), Oxide semiconductor, Relaxed SiGe, Si layer, Si/SiGe heterojunction, electric field, field effect, heterojunction structure, hot electrons, metal oxide semiconductor, potential well, saturation current, transconductance (gm), vertical electric field