사마륨 실리사이드를 이용한 쇼트키 장벽 트랜지스터 제작
김약연, 박병철, 최철종, 전명심, 이성재, 장문규
- 7545000 (2009.06.09)
- Provided are a Schottky barrier tunnel transistor and a method of manufacturing the same that are capable of minimizing leakage current caused by damage to a gate sidewall of the Schottky barrier tunnel transistor using a Schottky tunnel barrier naturally formed at a semiconductor-metal junction as a tunnel barrier. The method includes the steps of: forming a semiconductor channel layer on an insulating substrate; forming a dummy gate on the semiconductor channel layer; forming a source and a drain at both sides of the dummy gate on the insulating substrate; removing the dummy gate; forming an insulating layer on a sidewall from which the dummy gate is removed; and forming an actual gate in a space from which the dummy gate is removed. In manufacturing the Schottky barrier tunnel transistor using the dummy gate, it is possible to form a high-k dielectric gate insulating layer and a metal gate, and stable characteristics in silicidation of the metal layer having very strong reactivity can be obtained.
- KSP 제안 키워드
- Channel layer, High-K, High-k Dielectric, Leakage current, Metal gate, Metal junction, Schottky barriers(SBs), Stable characteristics, Tunnel barrier, Tunnel transistors, insulating layer, insulating substrate, metal layer