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등록 1.3um 장파장 수직공진표면발광레이저다이오드의 DBR 제조방법

1.3um 장파장 수직공진표면발광레이저다이오드의 DBR 제조방법
이미지 확대
발명자
김기수, 한원석, 오대곤, 김성복
출원번호
11544832 (2006.10.05)
공개번호
20070127535 (2007.06.07)
등록번호
7369595 (2008.05.06)
출원국
미국
협약과제
초록
A DBR structure in a VCSEL diode, a method of manufacturing the DBR structure, and a VCSEL diode are provided. The DBR structure in the VCSEL diode includes: an InAlGaAs layer having a predetermined refractive index and disposed on an InP substrate; a first InAlAs layer having a lower refractive index than the InAlGaAs layer and disposed on the InAlGaAs layer; an InP layer having a lower refractive index than the InAlGaAs layer and disposed on the first InAlAs layer; and a second InAlAs layer having a lower refractive index than the InAlGaAs layer and disposed on the InP layer. Thus, the DBR structure can reduce optical loss due to type-II band line-up at a junction between the InAlGaAs layer and the InP layer, and thus improve device characteristics.
KSP 제안 키워드
Band line-up, Bragg reflector, Device characteristics, Distributed Bragg reflector, InP substrate, Line-up, Optical loss, Surface-emitting laser, Type II, Vertical cavity, Vertical cavity surface emitting, refractive index, vertical-cavity surface-emitting laser(VCSEL)