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구분 출원국
출원년도 ~ 키워드

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등록 단일파장 분포귀환형 양자점 반도체 레이저 구조

단일파장 분포귀환형 양자점 반도체 레이저 구조
이미지 확대
발명자
이진홍, 홍성의, 김진수, 오대곤, 곽호상
출원번호
11595470 (2006.11.09)
공개번호
20070133639 (2007.06.14)
등록번호
7606284 (2009.10.20)
출원국
미국
협약과제
초록
Provided is a distributed feedback semiconductor laser structure including: a first clad layer; a first ridge waveguide formed on the first clad layer; an active layer formed on the first ridge waveguide; a second ridge waveguide formed on the active layer; a second clad layer formed on the second ridge waveguide; an ohmic contact layer formed on the second clad layer; and a plurality of gratings formed in at least one of the first and second clad layers, making a predetermined angle with the first ridge waveguide or the second ridge waveguide, and periodically arranged in a longitudinal direction of the first or second ridge waveguide. As a result, a general hologram lithography process capable of mass production is applied to the present invention so that process time can be reduced. Also, a distributed feedback semiconductor laser structure using a quantum-dot active layer that does not require an additional process for obtaining a pure single-wavelength is provided.
KSP 제안 키워드
Active Layer, Clad layer, Contact layer, Distributed feedback, Longitudinal direction, Ohmic contact, Quantum Dot(QD), Ridge waveguides(RWs), Semiconductor lasers, Single wavelength, lithography process, mass production, process time
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