ETRI-Knowledge Sharing Plaform

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성과물

특허 검색
구분 출원국
출원년도 ~ 키워드

상세정보

등록 광학 리소그라피방법을 이용한 미세 티형 게이트의 제조

광학 리소그라피방법을 이용한 미세 티형 게이트의 제조
이미지 확대
발명자
심재엽, 강동민, 윤형섭, 이경호, 홍주연
출원번호
11607417 (2006.12.01)
공개번호
20070128752 (2007.06.07)
등록번호
7468295 (2008.12.23)
출원국
미국
협약과제
초록
A method of fabricating a T-gate is provided. The method includes the steps of: forming a photoresist layer on a substrate; patterning the photoresist layer formed on the substrate and forming a first opening; forming a first insulating layer on the photoresist layer and the substrate; removing the first insulating layer and forming a second opening to expose the substrate; forming a second insulating layer on the first insulating layer; removing the second insulating layer and forming a third opening to expose the substrate; forming a metal layer on the second insulating layer on which the photoresist layer and the third opening are formed; and removing the metal layer formed on the photoresist layer. Accordingly, a uniform and elaborate opening defining the length of a gate may be formed by deposition of the insulating layer and a blanket dry etching process, and thus a more elaborate micro T-gate electrode may be fabricated.
KSP 제안 키워드
Etching process, T-Gate, dry etching, gate electrode, insulating layer, metal layer