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구분 출원국
출원년도 ~ 키워드

상세정보

등록 수퍼루미네슨트 다이오드 및 그 제조방법

수퍼루미네슨트 다이오드 및 그 제조방법
이미지 확대
발명자
박문호, 오광룡, 백용순
출원번호
11635195 (2006.12.07)
공개번호
20070223551 (2007.09.27)
등록번호
7599403 (2009.10.06)
출원국
미국
협약과제
초록
A 1.55 �m SLD having a laser diode (LD) region and a semiconductor optical amplifier (SOA) region, and a method of fabricating the same, are disclosed. The SLD includes: an InP substrate having a LD region and a SOA region for amplifying light emitted from the LD region; an optical waveguide having a BRS (buried ridge strip) structure having an active layer of resonant strip pattern formed on the InP substrate and extending from the SOA region to the LD region; a first electrode formed on the active layer in the SOA region, a second electrode formed on the active layer in the LD region and electrically isolated from the first electrode; and a current blocking region interposed between the first electrode and the second electrode in order to electrically isolate the first electrode and the second electrode from each other
KSP 제안 키워드
Active Layer, InP substrate, Laser diode(LD), Optical amplifier, Optical waveguides, Semiconductor optical amplifiers(SOAs), Superluminescent diodes(SLDs)