반도체 레이저가 내장된 상변화형 반도체 메모리 소자구조 및 그 제작 방법
유병곤, 윤성민, 최규정, 이승윤, 박영삼, 이남열, 류상욱
- 7417891 (2008.08.26)
- Provided is a phase change memory device including: a phase change memory unit comprising a phase change layer pattern; a laser beam focusing unit locally focusing a laser beam on the phase change layer pattern of the phase change memory unit; and a semiconductor laser unit generating and emitting the laser beam towards the laser beam focusing unit. Thus set or reset operations in the phase change memory device uses laser beams locally applied, thereby reducing the consumption power and preventing destruction or change in information stored in neighboring cell during the operations of unit cell.
- KSP 제안 키워드
- Laser beam focusing, Laser beams, Layer pattern, Phase Change Material(PCM), Phase change, Phase change memory unit, Semiconductor lasers, beam focusing, memory device, unit cell