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성과물

특허 검색
구분 출원국
출원년도 ~ 키워드

상세정보

등록 고효율의 실리콘 발광 소자

고효율의 실리콘 발광 소자
이미지 확대
발명자
김태엽, 김경현, 박래만, 성건용
출원번호
11720987 (2005.11.14)
공개번호
20090242913 (2009.10.01)
등록번호
7671377 (2010.03.02)
출원국
미국
초록
Provided is a highly efficient silicon-based light emitting diode (LED) including a Distributed Bragg Reflector (DBR), an n-type doping layer, and a p-type substrate structure. The silicon-based LED includes: a substrate having a p-type mesa substrate structure; an active layer that is formed on the substrate and has a first surface and a second surface opposite the first surface; a first reflective layer facing the first surface of the active layer; a second reflective layer that is located on either side of the p-type substrate structure and faces the second surface of the active layer; an n-type doping layer sandwiched between the active layer and the first reflective layer; a first electrode electrically connected to the n-type doping layer; and a second electrode electrically connected to the p-type substrate structure.
KSP 제안 키워드
Active Layer, Bragg reflector, Distributed Bragg reflector, N-type, Substrate structure, high efficiency, highly efficient, light-emitting, light-emitting diode(LED), n-type doping, p-Type, silicon-based
패밀리
 
패밀리 특허 목록
구분 특허 출원국 KIPRIS
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