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구분 출원국
출원년도 ~ 키워드

상세정보

등록 절연막, 이를 이용한 유기박막 트랜지스터 및 제조방법

절연막, 이를 이용한 유기박막 트랜지스터 및 제조방법
이미지 확대
발명자
김기현, 윤성민, 강승열, 안성덕, 서경수, 백규하, 유인규
출원번호
11782889 (2007.07.25)
공개번호
20080063795 (2008.03.13)
등록번호
8039294 (2011.10.18)
출원국
미국
협약과제
초록
Provided is an insulating layer in which an inorganic material is added to an organic polymer to thereby improve the insulating properties, an organic thin film transistor using the insulating layer, and a method of fabricating the organic thin film transistor. An insulating layer for an organic thin film transistor including a vinyl polymer and an inorganic material is provided. Here, a weight ratio of the vinyl polymer to the inorganic material may be in the range of 1:0.0001 to 1:0.5. Accordingly, it is possible to fabricate a thin film at low temperature and, further, to fabricate an insulating layer having a high-dielectric constant, not affecting other layers formed in the previous processes during the formation of the insulating layer.
KSP 제안 키워드
Dielectric Constant, High dielectric constant, Inorganic material, Insulating properties, Low temperature(LT), Organic thin film, Organic thin-film transistors, Thin-Film Transistor(TFT), Vinyl polymer, Weight ratio, insulating layer, organic polymer, thin film(TF)