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특허 검색
구분 출원국
출원년도 ~ 키워드

상세정보

등록 급격한 금속-절연체 전이를 이용한 메모리소자 및 그 동작방법

급격한 금속-절연체 전이를 이용한 메모리소자 및 그 동작방법
이미지 확대
발명자
김현탁, 김봉준, 강광용, 이용욱, 윤선진, 채병규
출원번호
11994224 (2006.06.29)
공개번호
20090114896 (2009.05.07)
등록번호
7791924 (2010.09.07)
출원국
미국
초록
Provided are a memory device that undergoes no structural phase change, maintains a uniform thin film, and can perform a high-speed switching operation, and a method of operating the same. The memory device includes a substrate, an abrupt MIT material layer, and a plurality of electrodes. The abrupt MIT material layer is disposed on the substrate and undergoes an abrupt metal-insulator transition by an energy change between electrons. The plurality of electrodes are brought into contact with the abrupt MIT material layer and are melted by heat to form a conductive path on the abrupt MIT material layer.
KSP 제안 키워드
Energy change, High Speed, High-speed switching, Phase change, Structural phase change, Switching operation, Uniform thin film, conductive path, memory device, metal-insulator, metal-insulator transition, thin film(TF)