정전기 방전을 방지하기 위한 3중 웰 SCR
김귀동, 권종기, 김종대
- 7576961 (2009.08.18)
- Provided is an electrostatic discharge (ESD) protection circuit using a silicon controlled rectifier (SCR), which is applied to a semiconductor integrated circuit (IC). A semiconductor substrate has a triple well structure such that a bias is applied to a p-well corresponding to a substrate of a ggNMOS device. Thus, a trigger voltage of the SCR is reduced. In addition, two discharge paths are formed using two SCRs including PNP and NPN bipolar transistors. As a result, the ESD protection circuit can have greater discharge capacity.
- KSP 제안 키워드
- Bipolar transistors, Controlled Rectifier, ESD protection, ESD protection circuit, Electro-Static Discharge(ESD), Electrostatic discharge (ESD) protection, Electrostatic discharge (ESD) protection circuit, Integrated circuit, Protection circuit, Semiconductor integrated, Silicon Controlled Rectifier(SCR), Well structure, discharge capacity, p-well, semiconductor substrate, trigger voltage