등록
낮은 MIT 전압용 MoBRiK 소자를 이용한 초고전압 잡음 제거회로
- 발명자
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김현탁, 김봉준, 강광용, 이용욱, 채병규, 윤선진, 김경옥
- 출원번호
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12021764 (2008.01.29)
- 공개번호
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20080142900 (2008.06.19)
- 등록번호
- 7489492 (2009.02.10)
- 출원국
- 미국
- 초록
- Provided are an abrupt metal-insulator transition (MIT) device for bypassing super-high voltage noise to protect an electric and/or electronic system, such as, a high-voltage switch, from a super-high voltage, a high-voltage noise removing circuit for bypassing the super-high voltage noise using the abrupt MIT device, and an electric and/or electronic system including the high-voltage noise removing circuit. The abrupt MIT device includes a substrate, a first abrupt MIT structure, and a second abrupt MIT structure. The first and second abrupt MIT structures are formed on an upper surface and a lower surface, respectively, of the substrate. The high-voltage noise removing circuit includes an abrupt MIT device chain connected in parallel to the electric and/or electronic system to be protected. The abrupt MIT device chain includes at least two abrupt MIT devices serially connected to each other.
- KSP 제안 키워드
- High Voltage, High power, High-voltage switch, Noise Removing, Power noise, Super-high, Voltage Noise, electronic system, metal-insulator, metal-insulator transition, voltage switch