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성과물

특허 검색
구분 출원국
출원년도 ~ 키워드

상세정보

등록 고휘도 다이오드 및 그 제조 방법

고휘도 다이오드 및 그 제조 방법
이미지 확대
발명자
송정호, 김기수, 임영안, 김경옥
출원번호
12118543 (2008.05.09)
공개번호
20090152528 (2009.06.18)
등록번호
7745836 (2010.06.29)
출원국
미국
협약과제
초록
Provided are a superluminescent diode with a high optical power and a broad wavelength band, and a method of fabricating the same. The superluminescent diode includes: at least one high optical confinement factor (HOCF) region; and at least one low optical confinement factor (LOCF) region having a lower optical confinement factor than the HOCF region. The method includes obtaining a difference of optical confinement factors in the HOCF region and the LOCF region through a selective area growth method, the selective area growth method using a deposition thicknesses difference of thin layers according to a width difference of openings that expose a substrate.
KSP 제안 키워드
Area growth, Broad band, Confinement factor, Growth method, High power, Optical power, Selective area, Selective area growth, Superluminescent diodes(SLDs), high optical power, optical confinement, optical confinement factor, thin layer