실리콘 에피층을 이용한 ＣＭＯＳ 기반의 평판형 애벌란시 포토다이오드 및 그 제조 방법
윤용선, 김보우, 박건식, 강진영, 박종문
- 7994553 (2011.08.09)
- A complementary metal-oxide semiconductor (CMOS)-based planar type avalanche photo diode (APD) using a silicon epitaxial layer and a method of manufacturing the APD, the photo diode including: a substrate; a well layer of a first conductivity type formed in the substrate; an avalanche embedded junction formed in the well layer of the first conductivity type by low energy ion implantation; the silicon epitaxial layer formed in the avalanche embedded junction; a doping area of a second conductivity type opposite to the first conductive type, formed from a portion of a surface of the well layer of the first conductivity type in the avalanche embedded junction and forming a p-n junction; positive and negative electrodes formed on the doping area of the second conductivity type and the well layer of the first conductivity type separated from the doping area of the second conductivity type, respectively; and an oxide layer formed on an overall surface excluding a window where the positive and negative electrodes are formed.
- KSP 제안 키워드
- Avalanche photo diode(APD), Complementary metal-oxide-semiconductor(CMOS), Epitaxial layer, Ion implantation, Low energy, Low energy ion, Low energy ion implantation, Metal-oxide(MOX), Negative electrodes, Oxide layer, Oxide semiconductor, P-N junction, Petri net(PN), Photo diode, Positive and negative, Silicon epitaxial layer, energy ion implantation, metal oxide semiconductor, positive and