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구분 출원국
출원년도 ~ 키워드

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등록 고감도 반도체 FET 센서 및 그 제조방법

고감도 반도체 FET 센서 및 그 제조방법
이미지 확대
발명자
양종헌, 김태엽, 장문규, 전명심, 유한영, 아칠성, 백인복, 김안순, 박찬우, 안창근
출원번호
12195302 (2008.08.20)
공개번호
20090152596 (2009.06.18)
등록번호
7893466 (2011.02.22)
출원국
미국
협약과제
초록
Provided are a semiconductor Field-Effect Transistor (FET) sensor and a method of fabricating the same. The method includes providing a semiconductor substrate, forming a sensor structure having a fin-shaped structure on the semiconductor substrate, injecting ions for electrical ohmic contact into the sensor structure, and depositing a metal electrode on the sensor structure, immobilizing a sensing material to be specifically combined with a target material onto both sidewall surfaces of the fin-shaped structure, and forming a passage on the sensor structure such that the target material passes through the fin-shaped structure.
KSP 제안 키워드
FET sensor, Field-effect transistors(FETs), Ohmic contact, Sensing material, Target material, field effect, metal electrode, semiconductor substrate