상세정보
등록 고감도 반도체 FET 센서 및 그 제조방법
- 출원번호
- 12195302 (2008.08.20)
- 공개번호
- 20090152596 (2009.06.18)
- 등록번호
- 7893466 (2011.02.22)
- 출원국
- 미국
- 협약과제
- 초록
- Provided are a semiconductor Field-Effect Transistor (FET) sensor and a method of fabricating the same. The method includes providing a semiconductor substrate, forming a sensor structure having a fin-shaped structure on the semiconductor substrate, injecting ions for electrical ohmic contact into the sensor structure, and depositing a metal electrode on the sensor structure, immobilizing a sensing material to be specifically combined with a target material onto both sidewall surfaces of the fin-shaped structure, and forming a passage on the sensor structure such that the target material passes through the fin-shaped structure.
- KSP 제안 키워드
- FET sensor, Field-effect transistors(FETs), Ohmic contact, Sensing material, Target material, field effect, metal electrode, semiconductor substrate