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구분 출원국
출원년도 ~ 키워드

상세정보

등록 상변화 메모리 소자 및 그 제조 방법

상변화 메모리 소자 및 그 제조 방법
이미지 확대
발명자
윤성민, 유병곤, 이승윤, 박영삼, 이남열, 최규정
출원번호
12240013 (2008.09.29)
공개번호
20090184307 (2009.07.23)
등록번호
7977674 (2011.07.12)
출원국
미국
초록
A phase change memory device and a method of fabricating the same are provided. A phase change material layer of the phase change memory device is formed of germanium (Ge)-antimony (Sb)-Tellurium (Te)-based Ge2Sb2+xTe5 (0.12fxf0.32), so that the crystalline state is determined as a stable single phase, not a mixed phase of a metastable phase and a stable phase, in phase transition between crystalline and amorphous states of a phase change material, and the phase transition according to increasing temperature directly transitions to the single stable phase from the amorphous state. As a result, set operation stability and distribution characteristics of set state resistances of the phase change memory device can be significantly enhanced, and an amorphous resistance can be maintained for a long time at a high temperature, i.e., around crystallization temperature, and thus reset operation stability and rewrite operation stability of the phase change memory device can be significantly enhanced.
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