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성과물

특허 검색
구분 출원국
출원년도 ~ 키워드

상세정보

등록 도넛형태의 촉매금속층을 이용한 실리콘 나노튜브 제조방법

도넛형태의 촉매금속층을 이용한 실리콘 나노튜브 제조방법
이미지 확대
발명자
박래만, 김상협, 박종혁, 맹성렬
출원번호
12304737 (2006.12.08)
공개번호
20090325365 (2009.12.31)
등록번호
7985666 (2011.07.26)
출원국
미국
협약과제
초록
Provided is a method of manufacturing silicon nanowires including: forming a silicon nanodot thin film having a plurality of silicon nanodots exposed on a substrate; and growing the silicon nanowires on the silicon nanodot thin film using the silicon nanodots as a nucleation site. The silicon nanowires can be manufactured using the silicon nanodot thin film disposed in a silicon nitride matrix, as a nucleation site instead of using catalytic metal islands, wherein the silicon nanodot thin film includes the silicon nanodots.
KSP 제안 키워드
Catalytic metal, Metal islands, Nucleation sites, Silicon Nitride, Silicon nanodots, Silicon nanowires(SiNWs), thin film(TF)