상 변화 물질을 이용한 전자 소자, 상 변화 메모리 소자 및 이의 제조 방법
이승윤, 유병곤, 정순원, 윤성민, 박영삼
- 7989793 (2011.08.02)
- Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed.
- KSP 제안 키워드
- Electrical devices, High Speed, Low-Power, Non-Volatile Memory(NVM), Nonvolatile memory devices, Phase Change Material(PCM), Phase change, Power Consumption, Solid state reaction, material forming, memory device, solid state