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구분 출원국
출원년도 ~ 키워드

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등록 Localized SIMOX 및 선택적 에피택셜 성장 방법을 접목한 실리콘 광소자 및 실리콘 전자소자/회로의 단일집적 기반 기술

Localized SIMOX 및 선택적 에피택셜 성장 방법을 접목한 실리콘 광소자 및 실리콘 전자소자/회로의 단일집적 기반 기술
이미지 확대
발명자
서동우, 김경옥
출원번호
12441377 (2007.04.03)
공개번호
20100044828 (2010.02.25)
등록번호
7915700 (2011.03.29)
출원국
미국
협약과제
초록
Provided is a monolithic integrated composite device including: a silicon substrate which is partitioned into a silicon integrated circuit forming region and a silicon optical device forming region; a buried oxide layer which is formed locally in the silicon substrate of the silicon optical device forming region and isolates unit devices of the silicon optical device forming region; an overlay layer formed locally on the buried oxide layer; a silicon optical device formed in the silicon optical device forming region using the silicon overlay layer; a silicon integrated circuit formed in the silicon integrated circuit forming region of the silicon substrate; and wiring connecting the silicon integrated circuit and the silicon optical device or connecting the silicon optical devices or connecting the silicon integrated circuits.
KSP 제안 키워드
Buried oxide, Buried oxide layer, Fabrication method, Integrated circuit, Monolithic integrated, Optical devices, Oxide layer, Silicon substrate, integrated composite