ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

특허 검색
구분 출원국
출원년도 ~ 키워드

상세정보

등록 스트레인드 베리드 패널을 구비하는 광소자

스트레인드 베리드 패널을 구비하는 광소자
이미지 확대
발명자
민봉기, 김현수, 김경옥, 박정우
출원번호
12441381 (2007.08.17)
공개번호
20090261383 (2009.10.22)
등록번호
7928442 (2011.04.19)
출원국
미국
협약과제
초록
Provided is an optical device having a strained buried channel area. The optical device includes: a semiconductor substrate of a first conductive type; a gate insulating layer formed on the semiconductor substrate; a gate of a second conductive type opposite to the first conductive type, formed on the gate insulating layer; a high density dopant diffusion area formed in the semiconductor substrate under the gate and doped with a first conductive type dopant having a higher density than the semiconductor substrate; a strained buried channel area formed of a semiconductor material having a different lattice parameter from a material of which the semiconductor substrate is formed and extending between the gate insulating layer and the semiconductor substrate to contact the high density dopant diffusion area; and a semiconductor cap layer formed between the gate insulating layer and the strained buried channel area.
KSP 제안 키워드
Buried channel, Cap layer, Dopant diffusion, High-density, Lattice parameter, Optical devices, Semiconductor materials, insulating layer, semiconductor substrate