상세정보
등록 네가티브 광전도 특성을 갖는 게르마늄 단결정 박막의 성장법 및 이를 이용한 광검출기
- 출원번호
- 12536098 (2009.08.05)
- 공개번호
- 20100133585 (2010.06.03)
- 등록번호
- 8188512 (2012.05.29)
- 출원국
- 미국
- 협약과제
- 초록
- A method of growing a germanium (Ge) epitaxial thin film having negative photoconductance characteristics and a photodiode using the same are provided. The method of growing the germanium (Ge) epitaxial thin film includes growing a germanium (Ge) thin film on a silicon substrate at a low temperature, raising the temperature to grow the germanium (Ge) thin film, and growing the germanium (Ge) thin film at a high temperature, wherein each stage of growth is performed using reduced pressure chemical vapor deposition (RPCVD). The three-stage growth method enables formation of a germanium (Ge) epitaxial thin film characterized by alleviated stress on a substrate, a lowered penetrating dislocation density, and reduced surface roughness.
- KSP 제안 키워드
- Chemical Vapor Deposition, Dislocation density, Epitaxial thin film, Growth method, High Temperature, Low temperature(LT), Reduced pressure, Reduced pressure chemical vapor deposition, Silicon substrate, Surface roughness, Three-stage, Three-stage growth, chemical vapor, thin film(TF), vapor deposition
- 패밀리
| 구분 | 특허 | 출원국 | KIPRIS |
|---|---|---|---|
| 등록 | 네가티브 광전도 특성을 갖는 게르마늄 단결정 박막의 성장법 및 이를 이용한 광검출기 | 대한민국 | KIPRIS |