ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

특허 검색
구분 출원국
출원년도 ~ 키워드

상세정보

등록 나노선 메모리

나노선 메모리
이미지 확대
발명자
김병훈, 유한영, 오순영, 윤용주, 홍원기, 김약연
출원번호
12621809 (2009.11.19)
공개번호
20100314609 (2010.12.16)
등록번호
8283654 (2012.10.09)
출원국
미국
초록
Provided is a nanowire memory including a source and a drain corresponding to the source, and a nano channel formed to connect the source to the drain. Here, the nano channel includes a nanowire electrically connecting the source to the drain according to voltages of the source and drain, and a nanodot formed on the nanowire and having a plurality of potentials capturing charges. Thus, the nanowire memory has a simple structure, thereby simplifying a process. It can generate multi current levels by adjusting several energy states using gates, operate as a volatile or non-volatile memory by adjusting the gates and the energy level, and include another gate configured to adjust the energy level, resulting in formation of a hybrid structure of volatile and non-volatile memories.
KSP 제안 키워드
Hybrid structure, Nano channel, Non-Volatile Memory(NVM), Source and drain, energy levels, energy states, non-volatile, simple structure, volatile memory