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성과물

특허 검색
구분 출원국
출원년도 ~ 키워드

상세정보

등록 그라핀 전계효과 트랜지스터 제조 방법

그라핀 전계효과 트랜지스터 제조 방법
이미지 확대
발명자
채병규, 김현탁
출원번호
12649321 (2009.12.29)
공개번호
20100258787 (2010.10.14)
등록번호
8247806 (2012.08.21)
출원국
미국
협약과제
초록
Provided is a field effect transistor including a graphene channel layer, and capable of increasing an on/off ratio of an operating current by using the graphene of the graphene channel layer. The field effect transistor includes: a substrate; the graphene channel layer which is disposed on a portion of the substrate and includes graphene; a first electrode disposed on a first region of the graphene channel layer and a portion of the substrate; an interlayer disposed on a second region of the graphene channel layer, which is apart from the first region, and a portion of the substrate; a second electrode disposed on the interlayer; a gate insulation layer disposed on a portion of the graphene channel layer, the first electrode, and the second electrode; and a gate electrode disposed on a portion of the gate insulation layer.
KSP 제안 키워드
Channel layer, Field-effect transistors(FETs), Insulation layer, field effect, gate electrode, graphene channel, graphene field-effect transistors, on/off ratio