상세정보
등록 초소형 압저항형 압력 센서 및 그 제조 방법
- 출원번호
- 12745745 (2008.04.21)
- 공개번호
- 20100251826 (2010.10.07)
- 등록번호
- 8261617 (2012.09.11)
- 출원국
- 미국
- 협약과제
- 초록
- A micro semiconductor-type pressure sensor and a manufacturing method thereof are provided. The micro semi-conductor-type pressure sensor is implemented by etching a cavity-formation region of a substrate to form a plurality of trenches, oxidizing the plurality of trenches through a thermal oxidation process to form a cavity-formation oxide layer, forming a membrane-formation material layer on upper portions of the cavity-formation oxide layer and the substrate, forming a plurality of etching holes in the membrane-formation material layer, removing the cavity-formation oxide layer through the plurality of etching holes to form a cavity buried in the substrate, forming a membrane reinforcing layer on an upper portion of the membrane-formation material layer to form a membrane for closing the cavity, and forming sensitive films made of a piezoresisive material on an upper portion of the membrane.
- KSP 제안 키워드
- Manufacturing method, Oxidation process, Oxide layer, Pressure Sensor, Semiconductor type, Thermal oxidation, piezoresistive pressure sensor, semi-conductor, thermal oxidation process