ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

특허 검색
구분 출원국
출원년도 ~ 키워드

상세정보

등록 반도체 소자의 제조방법

반도체 소자의 제조방법
이미지 확대
발명자
구재본, 강승열, 유인규
출원번호
12766953 (2010.04.26)
공개번호
20110136296 (2011.06.09)
등록번호
8198148 (2012.06.12)
출원국
미국
협약과제
초록
Provided is a method for manufacturing a semiconductor device. The method includes: providing a first substrate where an active layer is formed on a buried insulation layer; forming a gate insulation layer on the active layer; forming a gate electrode on the gate insulation layer; forming a source/drain region on the active layer at both sides of the gate electrode; exposing the buried insulation layer around a thin film transistor (TFT) including the gate electrode and the source/drain region; forming an under cut at the bottom of the TFT by partially removing the buried insulation layer; and transferring the TFT on a second substrate.
KSP 제안 키워드
Active Layer, Insulation layer, Thin-Film Transistor(TFT), gate electrode, semiconductor device, thin film(TF)