다층 히터를 포함하는 상변화 메모리 소자
이승윤, 최규정, 유병곤, 이남열, 윤성민, 박영삼
- 8872146 (2014.10.28)
- Provided are a Phase-change Random Access Memory (PRAM) device and a method of manufacturing the same. In particular, a PRAM device including a heating layer, wherein the heating layer comprises first and second heating layers having different physical properties from each other and a method of manufacturing the same are provided. Since the PRAM device according to the present invention includes a heating layer having optimal heating characteristics, a PRAM device having high reliability and excellent operating characteristics can be manufactured.
- KSP 제안 키워드
- Heating characteristics, Heating layers, High Reliability, Layer structure, Operating characteristics, Phase Change Material(PCM), Phase change, Phase-change random access memory(PRAM), Physical Properties, Random Access, memory device, multi-layer, multilayer structure, random access memory