선택적 SOI구조 기반의 광전 잔일집적 플랫폼 제조방법
권오균, 표정형, 김경옥, 서동우
- 8183633 (2012.05.22)
- Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.
- KSP 제안 키워드
- insulating layer, semiconductor device