상세정보
등록 선택적 SOI구조 기반의 광전 잔일집적 플랫폼 제조방법
- 출원번호
- 12847974 (2010.07.30)
- 공개번호
- 20100301448 (2010.12.02)
- 등록번호
- 8183633 (2012.05.22)
- 출원국
- 미국
- 협약과제
- 초록
- Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.
- KSP 제안 키워드
- insulating layer, semiconductor device