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등록 D-mode HEMT 소자의 단일 DC 바이어스 공급회로

D-mode HEMT 소자의 단일 DC 바이어스 공급회로
이미지 확대
발명자
강동민, 김해천, 김동영, 지홍구, 안호균, 이상흥, 장우진, 임종원
출원번호
12855055 (2010.08.12)
공개번호
20110037521 (2011.02.17)
등록번호
8294521 (2012.10.23)
출원국
미국
협약과제
초록
Provided is a power amplifier including: a depletion mode high electron mobility transistor (D-mode HEMT) configured to amplify a signal inputted to a gate terminal and output the amplified signal through a drain terminal; an input matching circuit configured to serially ground the gate terminal; and a DC bias circuit connected between the drain terminal and a ground. Through the foregoing configuration, the HEMT may be biased only by a single DC bias circuit without any biasing means to provide a negative voltage. Also, superior matching characteristic may be provided in various operation frequency bands through a shunt inductor and a choke inductor.
KSP 제안 키워드
High electron, High electron mobility, High electron mobility transistor(HEMT), Input matching, Matching characteristic, Negative voltage, bias circuit, dc bias, depletion mode, electron mobility, frequency band, matching circuit, power amplifiers(PAs)