넓은 linear-in-dB 가변 이득 범위를 갖는 CMOS 가변 이득 증폭기
- 8102209 (2012.01.24)
- A complementary metal-oxide semiconductor (CMOS) variable gain amplifier includes: a cascode amplifier including a common source field effect transistor and a common gate field effect transistor in a cascode structure; a first current generation unit connected in parallel to a drain of the common gate field effect transistor and configured to vary transconductance of the cascode amplifier; a second current generation unit connected to a common source of the cascode amplifier and configured to control a bias current of the cascode amplifier; a current control unit configured to generate a current control signal for the first and second current generation units; and a load stage connected in series to a drain of the cascode amplifier and configured to output an output current, which is varied by the overall transconductance of the cascode amplifier, as a differential output voltage.
- KSP 제안 키워드
- Cascode amplifier, Complementary metal-oxide-semiconductor(CMOS), Control Signal, Control Unit, Current Control, Current generation, Field-effect transistors(FETs), Generation unit, Linear-in-dB, Metal-oxide(MOX), Output Voltage, Oxide semiconductor, Source field, Variable Gain, Variable Gain Amplifier(VGA), bias current, cascode structure, common gate, common-source, connected in series, differential output, field effect, gain range, gate field, metal oxide semiconductor, output current