내장형 캐패시터를 갖는 고전력 고주파 제어회로용 스위치 소자의 구조 및 제조방 법
문재경, 안호균, 김해천, 지홍구
- 8697507 (2014.04.15)
- Provided are a transistor of a semiconductor device and a method of fabricating the same. The transistor of a semiconductor device includes an epitaxial substrate having a buffer layer, a first silicon (Si) planar doped layer, a first conductive layer, a second Si planar doped layer having a different dopant concentration from the first Si planar doped layer, and a second conductive layer, which are sequentially formed on a semi-insulating substrate; a source electrode and a drain electrode formed on both sides of the second conductive layer to penetrate the first Si planar doped layer to a predetermined depth to form an ohmic contact; and a gate electrode formed on the second conductive layer between the source electrode and the drain electrode to form a contact with the second conductive layer, wherein the gate electrode, the source electrode and the drain electrode are electrically insulated by an insulating layer, and a predetermined part of an upper part of the gate electrode is formed to overlap at least one of the source electrode and the drain electrode. Therefore, a maximum voltage that can be applied to the switching device is increased due to increases of a gate turn-on voltage and a breakdown voltage, and decrease of a parallel conduction component. As a result of this improved power handling capability, high-power and low-distortion characteristics and high isolation can be expected from the switching device.
- KSP 제안 키워드
- Breakdown voltage(BDV), Buffer layer, Conductive layer, Control Circuit, Distortion characteristics, Dopant concentration, Drain electrode, Fabrication method, Frequency control, High power, Ohmic contact, Power handling, Power handling capability, Radio Frequency(RF), Radio frequency control, Semi-Insulating, Switching device, Turn-on, Turn-on voltage, gate electrode, high isolation, insulating layer, insulating substrate, low-distortion, maximum voltage, semiconductor device