ETRI-Knowledge Sharing Plaform

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성과물

특허 검색
구분 출원국
출원년도 ~ 키워드

상세정보

등록 검출 소자

검출 소자
이미지 확대
발명자
안창근, 성건용, 박찬우, 백인복, 아칠성, 김안순, 김태엽, 양종헌
출원번호
13122273 (2009.05.27)
공개번호
20110180856 (2011.07.28)
등록번호
8426900 (2013.04.23)
출원국
미국
협약과제
초록
Provided is a sensing device, which includes a reactive material layer (260) responding to a specific functional group in a fluid, a sensing capacitor (B) including first and second electrodes disposed on and under an insulating layer (230), the first electrode being disposed under the reactive material layer (260), and a field effect transistor including a gate electrode connected with the first electrode of the sensing capacitor. Here, the reactive material layer (260) is formed in a conductive three-dimensional structure to widen a surface area. Thus, the sensing device may have high sensitivity by maximizing a capacitor sharing effect and a change in voltage amount applied to a gate, which may be caused by widening a surface area of the conductive three-dimensional structure with respect to the fluid flow.
KSP 제안 키워드
Field-effect transistors(FETs), Fluid flow, Functional group, High Sensitivity, Reactive material, Sensing device, Surface Area, Three dimensional(3D), Three-dimensional structure, capacitor sharing, dimensional structure, field effect, gate electrode, insulating layer