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특허 검색
구분 출원국
출원년도 ~ 키워드

상세정보

등록 아발란치 포토 다이오드의 제조방법

아발란치 포토 다이오드의 제조방법
이미지 확대
발명자
심재식, 김기수, 오명숙, 민봉기, 권용환, 남은수
출원번호
13273257 (2011.10.14)
공개번호
20120156826 (2012.06.21)
등록번호
8592247 (2013.11.26)
출원국
미국
협약과제
초록
A method includes: forming an epitaxy wafer by growing a light absorbing layer, a grading layer, an electric field buffer layer, and an amplifying layer on the front surface of a substrate in sequence; forming a diffusion control layer on the amplifying layer; forming a protective layer for protecting the diffusion control layer on the diffusion control layer; forming an etching part by etching from the protective layer to a predetermined depth of the amplifying layer; forming a first patterning part by patterning the protective layer; forming a junction region and a guardring region at the amplifying layer by diffusing a diffusion material to the etching part and the first patterning part; removing the diffusion control layer and the protective layer and forming a first electrode connected to the junction region on the amplifying layer; and forming a second electrode on the rear surface of the substrate.
KSP 제안 키워드
Absorbing layer, Avalanche photo diode(APD), Buffer layer, Control layer, Protective layer, diffusion control, electric field, front surface, rear surface
패밀리
 
패밀리 특허 목록
구분 특허 출원국 KIPRIS
등록 아발란치 포토다이오드의 제조방법 대한민국 KIPRIS