ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

특허 검색
구분 출원국
출원년도 ~ 키워드

상세정보

등록 고이동도 산화물박막트랜지스터

고이동도 산화물박막트랜지스터
이미지 확대
발명자
박상희, 유민기, 오힘찬, 황치선
출원번호
13849111 (2013.03.22)
공개번호
20130264564 (2013.10.10)
등록번호
8841665 (2014.09.23)
출원국
미국
협약과제
초록
Disclosed is a method for manufacturing an oxide thin film transistor, including: forming a gate electrode on a substrate on which a buffer layer is formed; forming a gate insulation layer on an entire surface of the substrate on which the gate electrode is formed; forming an oxide semiconductor layer on the gate insulation layer; forming a first etch stop layer on the oxide semiconductor layer; forming a second etch stop layer on the first etch stop layer by an atomic layer deposition method; patterning the first etch stop layer and the second etch stop layer, or forming a contact hole, through which a part of the oxide semiconductor layer is exposed, in the first etch stop layer and the second etch stop layer; forming a source electrode and a drain electrode on the first etch stop layer and the second etch stop layer; and forming a passivation layer on the entire surface of the substrate on which the source electrode and the drain electrode are formed.
KSP 제안 키워드
Atomic Layer Deposition, Atomic layer deposition method, Buffer layer, Contact hole, Deposition method, Drain electrode, Etch-stop, Insulation layer, Layer deposition, Oxide semiconductor, Oxide thin films, Thin-Film Transistor(TFT), atomic layer, etch stop layer, gate electrode, oxide thin-film transistors, passivation layer, stop layer, thin film(TF)