ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

특허 검색
구분 출원국
출원년도 ~ 키워드

상세정보

등록 전계효과형 화합물반도체소자 제작방법

전계효과형 화합물반도체소자 제작방법
이미지 확대
발명자
윤형섭, 임종원, 민병규, 안호균, 이종민, 문재경, 남은수, 김성일
출원번호
13916006 (2013.06.12)
공개번호
20140017885 (2014.01.16)
등록번호
8841154 (2014.09.23)
출원국
미국
협약과제
초록
Disclosed is a method of manufacturing a field effect type compound semiconductor device in which leakage current of a device is decreased and breakdown voltage is enhanced. The method of manufacturing a field effect type compound semiconductor device includes: stacking an active layer and an ohmic layer on a substrate and forming a first oxide layer on the ohmic layer; forming a mesa region in predetermined regions of the first oxide layer, the ohmic layer, and the active layer; planarizing the mesa region after forming a nitride layer by evaporating a nitride on the mesa region; forming an ohmic electrode on the first oxide layer; forming a minute gate resist pattern after forming a second oxide layer on a semiconductor substrate in which the ohmic electrode is formed and forming a minute gate pattern having a under-cut shaped profile by dry-etching the first oxide layer, the nitride layer, and the second oxide layer; forming a gate recess region by forming a head pattern of a gamma gate electrode on the semiconductor substrate; and forming the gamma gate electrode by evaporating refractory metal on the semiconductor substrate in which the gate recess region is formed.
KSP 제안 키워드
Active Layer, Breakdown voltage(BDV), Compound semiconductor device, Gate recess, Leakage current, Nitride layer, Oxide layer, Refractory metal, compound semiconductor, dry etching, field effect, gate electrode, ohmic electrode, resist pattern, semiconductor device, semiconductor substrate, shaped profile