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구분 출원국
출원년도 ~ 키워드

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등록 도핑 배리어를 가지는 자기 정렬 박막 트랜지스터

도핑 배리어를 가지는 자기 정렬 박막 트랜지스터
이미지 확대
발명자
박상희, 황치선, 오힘찬
출원번호
13960352 (2013.08.06)
공개번호
20140042539 (2014.02.13)
등록번호
9245978 (2016.01.26)
출원국
미국
협약과제
초록
Disclosed are a self-aligned thin film transistor controlling a diffusion length of a doping material using a doping barrier in a thin film transistor having a self-aligned structure and a method of manufacturing the same. The self-aligned thin film transistor with a doping barrier includes: an active layer formed on a substrate and having a first doping region, a second doping region, and a channel region; a gate insulating film formed on the channel region; a gate electrode formed on the gate insulating film; a doping source film formed on the first doping region and the second doping region; and a doping barrier formed between the doping source film and the first doping region and between the doping source film and the second doping region.
KSP 제안 키워드
Active Layer, Aligned structure, Diffusion length, Insulating film, Self-aligned structure, Thin-Film Transistor(TFT), gate electrode, self-Aligned, thin film(TF)