ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

특허 검색
구분 출원국
출원년도 ~ 키워드

상세정보

4 / 11,455 이전 다음
목록

등록 집적화된 고전압 전력 소자 제조방법

집적화된 고전압 전력 소자 제조방법
이미지 확대
발명자
김종대, 김상기, 구진근, 김대용
출원번호
09865004 (2001.05.23)
등록번호
6404011 (2002.06.11)
출원국
미국
협약과제
98MM2500, 300V급 DMOS급 및 고속 BCD 전력소자 기술, 구진근
초록
A method for fabricating a semiconductor power integrated circuit includes the steps of forming a semiconductor structure having at least one active region, wherein an active region includes a well region for forming a source and a drift region for forming a drain region, forming a trench for isolation of the active regions, wherein the trench has a predetermined depth from a surface of the semiconductor structure, forming a first TEOS-oxide layer inside the trench and above the semiconductor structure, wherein the first TEOS-oxide layer has a predetermined thickness from the surface of the semiconductor device, forming a second TEOS-oxide layer on the first TEOS-oxide layer, wherein a thickness of the second TEOS-oxide layer is smaller than that of the first TEOS-oxide layer, and performing a selective etching to the first and second TEOS-oxide layers, to thereby simultaneously form a field oxide layer pattern, a diode insulating layer pattern and a gate oxide layer pattern, to thereby reduce processing steps and obtain a low on-resistance.
KSP 제안 키워드
Gate oxide, Integrated circuit, Layer pattern, Low on-resistance, ON-resistance, Oxide layer, Semiconductor structure, active region, drift region, insulating layer, selective etching, semiconductor device