ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

특허 검색
구분 출원국
출원년도 ~ 키워드

상세정보

9 / 11,455 이전 다음
목록

등록 단일 강유전체 트랜지스터를 구비한 강유전체 메모리 장치

단일 강유전체 트랜지스터를 구비한 강유전체 메모리 장치
이미지 확대
발명자
양일석, 유인규, 유병곤, 조경익, 이원재
출원번호
09966112 (2001.10.01)
등록번호
6411542 (2002.06.25)
출원국
미국
협약과제
99MM2100, 단일 트랜지스터 강유전체 소자 연구, 유병곤
초록
A ferroelectric memory device including a single ferroelectric transistor that one unit memory cell is independently selected and programmed, when the unit memory cell is programmed for "the first state" or "the second state" by applying a DC bias voltage to the single ferroelectric transistor's gate and well. In addition, the ferroelectric memory device can be applied with normal power level Vdd and GND. The ferroelectric memory device includes a plurality of unit memory cells which are arranged in a matrix, by crossing at least one word line in a column direction with a plurality of bit lines and source lines in a row direction and is connected between the source line and the bit line.
KSP 제안 키워드
Bit line(BL), DC bias voltage, Power Levels, Word line(WL), bias voltage, dc bias, ferroelectric FET, ferroelectric memory, memory cell, memory device