D-mode HEMT 소자의 단일 DC 바이어스 공급회로
강동민, 김해천, 김동영, 지홍구, 안호균, 이상흥, 장우진, 임종원
- 8294521 (2012.10.23)
09ZB1400, 수요자 중심 융합부품 개발지원,
- Provided is a power amplifier including: a depletion mode high electron mobility transistor (D-mode HEMT) configured to amplify a signal inputted to a gate terminal and output the amplified signal through a drain terminal; an input matching circuit configured to serially ground the gate terminal; and a DC bias circuit connected between the drain terminal and a ground. Through the foregoing configuration, the HEMT may be biased only by a single DC bias circuit without any biasing means to provide a negative voltage. Also, superior matching characteristic may be provided in various operation frequency bands through a shunt inductor and a choke inductor.
- KSP 제안 키워드
- High electron, High electron mobility, High electron mobility transistor(HEMT), Input matching, Matching characteristic, Negative voltage, bias circuit, dc bias, depletion mode, electron mobility, frequency band, matching circuit, power amplifiers(PAs)