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성과물

특허 검색
구분 출원국
출원년도 ~ 키워드

상세정보

등록 이중 구조의 나노점을 갖는 광전소자 및 그 제조방법

이중 구조의 나노점을 갖는 광전소자 및 그 제조방법
이미지 확대
발명자
심규환, 송영주, 김상훈, 강진영
출원번호
10329269 (2002.12.24)
공개번호
20040041144 (2004.03.04)
등록번호
6791105 (2004.09.14)
출원국
미국
협약과제
02MB1400, 실리콘 미래 신소자 원천기술 개발, 이성재
초록
An optoelectronic device and a method of manufacturing the same which the optoelectronic effect such as light emission or light reception can be increased by forming a dual-structural nano dot to enhance the confinement density of electrons and holes are provided. The optoelectronic device comprises an electron injection layer, a nano dot, and a hole injection layer. The nano dot has a dual structure composed of an external nano dot and an internal dot. The method of manufacturing the optoelectronic device comprises the steps of forming an electron injection layer on a semiconductor substrate; growing nano dot layer on the electron injection layer by an epi-growth method; heating the nano dot layer so that the nano dot has a dual structure composed of an external nano dot and an internal nano dot; and forming a hole injection layer on the overall structure.
KSP 제안 키워드
Dual structure, Growth method, Hole injection layer(HIL), Light Emission, Nano-dot, electron injection, electron injection layer, hole injection, optoelectronic devices, semiconductor substrate