질화물 반도체 전계효과 트랜지스터 및 그 제조방법
- 6864510 (2005.03.08)
02MB1300, 차세대 무선 인터넷을 위한 고출력 고주파 GaN 전자소자 연구,
- Provided are a nitride semiconductor field effect transistor (FET) and a method of fabricating the nitride semiconductor FET. The nitride semiconductor FET includes a first semiconductor layer, a second semiconductor layer, a two-dimensional electron gas layer, a T-shaped gate, and a source/drain ohmic electrode. The first semiconductor layer is formed on a substrate. The second semiconductor layer is formed on the first semiconductor layer and has a bandgap energy that is different from the bandgap energy of the first semiconductor layer. The two-dimensional electron gas layer is formed of a hetero-junction of the first semiconductor layer and the second semiconductor layer in an interfacial area between the first semiconductor layer and the second semiconductor layer. The T-shaped gate is formed on the second semiconductor layer and is connected to the second semiconductor layer. The source/drain ohmic electrode is formed by sequentially forming an Ni (or Cr) layer, an In layer, an Mo (or W) layer, and an Au layer at both sides of the second semiconductor layer and on the first semiconductor layer.
- KSP 제안 키워드
- Au layer, Band-gap energy, Electron gas, Field-effect transistors(FETs), Gas layer, T-shaped, T-shaped gate, Two-dimensional electron gas(2DEG), field effect, hetero-junction, interfacial area, nitride semiconductor, ohmic electrode, two-dimensional(2D)