상세정보
등록 T 형 게이트 전극을 갖는 반도체소자 및 그 제조방법
- 출원번호
- 10723526 (2003.11.25)
- 공개번호
- 20040104443 (2004.06.03)
- 등록번호
- 6979871 (2005.12.27)
- 출원국
- 미국
- 협약과제
- 02MB2800, 0.25㎛ E/D MESFET Library 개발, 김해천
- 초록
- A semiconductor device in which a silica aerogel layer having a very low dielectric constant is used as an insulating layer such that parasitic capacitance between a gate electrode and a source electrode in a field effect transistor having a T-shaped gate electrode, and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor substrate, source and drain electrodes, which are formed on the semiconductor substrate to make ohmic contact with the semiconductor substrate, a T-shaped gate electrode, which is formed between the source and drain electrodes on the semiconductor substrate, and an insulating layer including a silica aerogel layer, the silica aerogel layer being interposed between the gate electrode and the source and drain electrodes.
- KSP 제안 키워드
- Dielectric Constant, Field-effect transistors(FETs), Low dielectric, Low dielectric constant, Ohmic contact, Parasitic Capacitance, Silica aerogel, Source and drain, T-shaped, T-shaped gate, field effect, gate electrode, insulating layer, semiconductor device, semiconductor substrate