상세정보
등록 추출 격자 브래그 반사기와 결합된 추출 격자 분포 궤환 레이저 다이오드의 구조
- 출원번호
- 10749043 (2003.12.29)
- 공개번호
- 20040218639 (2004.11.04)
- 등록번호
- 7130325 (2006.10.31)
- 출원국
- 미국
- 협약과제
- 01MB3900, 광출력 안정화 Tunable LD 모듈, 박문호
- 초록
- The present invention relates to a semiconductor laser, having a construction capable of tuning a wavelength, in which a sampled grating distributed feedback SG-DFB structure portion and a sampled grating distributed Bragg reflector SG-DBR structure portion are integrated. In the present invention, the refraction index are varied in accordance with a current applied to the phase control area in the SG-DFB structure portion and the SG-DBR structure portion, whereby it is possible to continuously or discontinuously tune the wavelength. Therefore, in such a wavelength tunable semiconductor laser, its construction is relatively simple, and it is relatively useful to the manufacturing and mass-producing the semiconductor laser. In addition, such a wavelength tunable semiconductor laser has an excellent output optical efficiency while making it possible to tune the wavelength of the wide band.
- KSP 제안 키워드
- Bragg reflector, Control area, Distributed Bragg reflector, Distributed feedback, Phase control, Sampled grating, Sampled grating distributed Bragg reflector(SG-DBR), Semiconductor lasers, Wavelength tunable, Wide band, optical efficiency, refraction index, tunable semiconductor laser
- 패밀리
| 구분 | 특허 | 출원국 | KIPRIS |
|---|---|---|---|
| 등록 | 추출 격자 브래그 반사기와 결합된 추출 격자 분포 궤환 레이저 다이오드의 구조 | 영국 | |
| 등록 | 추출 격자 브래그 반사기와 결합된 추출 격자 분포궤환 파장가변 반도체 레이저 | 일본 |