상세정보
등록 절연체 바나듐 산화막을 채널영역으로 이용한 전계효과 트랜지스터 및 그 제조방법
- 출원번호
- 10749596 (2003.12.30)
- 공개번호
- 20040245582 (2004.12.09)
- 등록번호
- 6933553 (2005.08.23)
- 출원국
- 미국
- 협약과제
- 03ZB1300, 정보통신 원천기술 연구, 정태형
- 초록
- Provided is a field effect transistor. The field effect transistor includes an insulating vanadium dioxide (VO2) thin film used as a channel material, a source electrode and a drain electrode disposed on the insulating VO2 thin film to be spaced apart from each other by a channel length, a dielectric layer disposed on the source electrode, the drain electrode, and the insulating VO2 thin film, and a gate electrode for applying a predetermined voltage to the dielectric layer.
- KSP 제안 키워드
- Channel Length, Channel material, Drain electrode, Field-effect transistors(FETs), dielectric layer, field effect, gate electrode, thin film(TF), vanadium dioxide