상세정보
등록 Infrared Ray Sensor Using Silicon Oxide Film as Infrared Ray Absorption Layer and Method of Fabricat
이미지 확대
Infrared Ray Sensor Using Silicon Oxide Film as Infrared Ray Absorption Layer and Method of Fabricat
- 출원번호
- 10788340 (2004.03.01)
- 공개번호
- 20040256559 (2004.12.23)
- 등록번호
- 7105819 (2006.09.12)
- 출원국
- 미국
- 협약과제
- 02MB3700, MEMS 기술을 이용한 초전형 적외선 어레이 센서 기반 기술, 유병곤
- 초록
- The present invention relates to a pyroelectric infrared ray sensor fabricated by using MEMS processes, wherein an infrared ray absorption layer disposed on the most top portion of the infrared ray sensor assembly is formed with a silicon oxide film (SiO2) to exhibit an excellent absorption efficiency with respect to the infrared wavelength band of 8 to 12 mm and function as a protective film for a sensor pixel. In addition, an infrared ray absorption layer, support arms and posts are formed in a single body to allow the sensor assembly to be robust and fabricating processes to be remarkably reduced to increase a process yield.
- KSP 제안 키워드
- 2 mm, Absorption layer, Infrared rays, Oxide film, Process yield, Protective film, Silicon oxide, Silicon oxide films, absorption efficiency, infrared ray sensor, infrared wavelength
- 패밀리
| 구분 | 특허 | 출원국 | KIPRIS |
|---|---|---|---|
| 등록 | 적외선 흡수층으로 실리콘 산화막을 사용한 적외선 센서및 그 제조 방법 | 대한민국 | KIPRIS |