등록
초미세 채널 전계 효과 트랜지스터 및 그 제조방법
- 발명자
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조원주, 양종헌, 안창근, 임기주, 오지훈, 이성재
- 출원번호
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10833452 (2004.04.27)
- 공개번호
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20050009250 (2005.01.13)
- 등록번호
- 7195962 (2007.03.27)
- 출원국
- 미국
- 협약과제
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03MB1400, 실리콘 미래 신소자 원천 기술 개발,
이성재
- 초록
- Provided is a MOSFET with an ultra short channel length and a method of fabricating the same. The ultra short channel MOSFET has a silicon wire channel region with a three-dimensional structure, and a source/drain junction formed in a silicon conductive layer formed of both sides of the silicon wire channel region. Also, a gate electrode formed on the upper surface of the silicon wire channel region by interposing a gate insulating layer having a high dielectric constant therebetween, and source and drain electrodes connected to the source/drain junction are included. The silicon wire channel region is formed with a triangular or trapezoidal section by taking advantage of different etch rates that depend on the planar orientation of the silicon. The source/drain junction is formed by a solid-state diffusion method.