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구분 출원국
출원년도 ~ 키워드


등록 초미세 채널 전계 효과 트랜지스터 및 그 제조방법

초미세 채널 전계 효과 트랜지스터 및 그 제조방법
이미지 확대
조원주, 양종헌, 안창근, 임기주, 오지훈, 이성재
10833452 (2004.04.27)
20050009250 (2005.01.13)
7195962 (2007.03.27)
03MB1400, 실리콘 미래 신소자 원천 기술 개발, 이성재
Provided is a MOSFET with an ultra short channel length and a method of fabricating the same. The ultra short channel MOSFET has a silicon wire channel region with a three-dimensional structure, and a source/drain junction formed in a silicon conductive layer formed of both sides of the silicon wire channel region. Also, a gate electrode formed on the upper surface of the silicon wire channel region by interposing a gate insulating layer having a high dielectric constant therebetween, and source and drain electrodes connected to the source/drain junction are included. The silicon wire channel region is formed with a triangular or trapezoidal section by taking advantage of different etch rates that depend on the planar orientation of the silicon. The source/drain junction is formed by a solid-state diffusion method.
KSP 제안 키워드
Channel Length, Conductive layer, Dielectric Constant, Etch rates, Field-effect transistors(FETs), High dielectric, High dielectric constant, Planar orientation, Short channel, Short channel MOSFET, Solid-state diffusion, Source and drain, Three dimensional(3D), Three-dimensional structure, diffusion method, dimensional structure, field effect, gate electrode, insulating layer, silicon wire, solid state, source/drain junction