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구분 출원국
출원년도 ~ 키워드

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등록 반도체 광소자의 제작 방법

반도체 광소자의 제작 방법
이미지 확대
발명자
송현우, 박상희, 김종희, 주영구, 한원석, 권오균
출원번호
10800680 (2004.03.16)
공개번호
20050118741 (2005.06.02)
등록번호
6989312 (2006.01.24)
출원국
미국
협약과제
03MB3600, 광엑세스용 광집적 모듈, 오광룡
초록
Provided is a method for fabricating a semiconductor optical device that can be used as a reflecting semiconductor mirror or an optical filter, in which two or more types of semiconductor layers having different etch rates are alternately stacked, at least one type of semiconductor layers is selectively etched to form an air-gap structure, and an oxide or a nitride having a good heat transfer property is deposited so that the air gap is buried, whereby it is possible to effectively implement the semiconductor reflector or the optical filter having a high reflectance in a small period because of the large index contrast between the oxide or the nitride buried in the air gap and the semiconductor layer.
KSP 제안 키워드
Air-gap, Etch rates, Heat Transfer, Heat transfer property, Index contrast, Optical devices, Optical filters, gap structures, high reflectance, semiconductor layers, transfer properties
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