상세정보
등록 화합물 반도체 고주파 스위치 소자
- 출원번호
- 10874396 (2004.06.22)
- 공개번호
- 20050121694 (2005.06.09)
- 등록번호
- 6933543 (2005.08.23)
- 출원국
- 미국
- 초록
- A high frequency switch device includes an epitaxy substrate that is formed by sequentially stacking an AlGaAs/GaAs superlattic buffer layer, a first Si planar doping layer, an undoped first AlGaAs spacer, an undoped InGaAs layer, an undoped second AlGaAs spacer, a second Si planar doping layer having a doping density greater than that of the first Si planar doping layer, and an undoped GaAs/AlGaAs capping layer on a GaAs semi-insulated substrate. The undoped GaAs/AlGaAs capping layer is formed with a source electrode and a drain electrode that form an ohmic contact with the undoped GaAs/AlGaAs capping layer thereon, and a gate electrode formed between the source electrode and the drain electrode, thereby forming a Schottky contact with the undoped GaAs/AlGaAs capping layer.
- KSP 제안 키워드
- Buffer layer, Capping layer, Doping Density, Drain electrode, Frequency Switch, High Frequency(HF), Ohmic contact, Schottky contacts, gate electrode